Datasheet4U Logo Datasheet4U.com

IRFIZ24G - Power MOSFET

Datasheet Summary

Description

Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • Isolated package.
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to lead creepage distance = 4.8 mm.
  • 175 °C operating temperature.
  • Dynamic dV/dt rating.
  • Low thermal resistance.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – IRFIZ24G

Datasheet Details

Part number IRFIZ24G
Manufacturer Vishay
File Size 906.37 KB
Description Power MOSFET
Datasheet download datasheet IRFIZ24G Datasheet
Additional preview pages of the IRFIZ24G datasheet.

📁 Similar Datasheet

  • IRFIZ24G - HEXFET Power MOSFET (International Rectifier)
  • IRFIZ24G - N-Channel MOSFET (INCHANGE)
  • IRFIZ24GP - N-Channel 60V MOSFET (VBsemi)
  • IRFIZ24A - Power MOSFET (Samsung)
  • IRFIZ24E - Power MOSFET (International Rectifier)
  • IRFIZ24EPBF - HEXFET Power MOSFET (International Rectifier)
  • IRFIZ24N - Power MOSFET (International Rectifier)
  • IRFIZ24N - N-Channel MOSFET (INCHANGE)
  • IRFIZ24NPBF - Power MOSFET (International Rectifier)
  • IRFIZ24V - Power MOSFET (International Rectifier)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com IRFIZ24G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Published: |