IRFIZ24G Datasheet and Specifications PDF

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Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eli.

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* 175 °C operating temperature
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization: for definitions of compliance please see DESCRIPT.

iscN-Channel MOSFET Transistor IRFIZ24G ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.1Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lo.

*Low drain-source on-resistance: RDS(ON) =0.1Ω (MAX)
*Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .