Datasheet Details
| Part number | IRFIZ24N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 105.40 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFIZ24N Datasheet
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General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- 2) 1.15 (.04 5) M IN . 1 2 3 N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D A 3X 1.40 (.05 5) 1.05 (.04 2) 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) M A M B 3X 0.48 (.019) 0.44 (.017) B 2 .54 (.100) 2X 2.85 (.112 ) 2.65 (.104 ) M IN IM U M C R E EP AG E D IST A NC E B ET W E EN A-B -C -D = 4.80 (.189 ) Part Marking Information TO-220 Fullpak E XAM PLE.