Datasheet Details
| Part number | IRFIZ24V |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 83.86 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFIZ24V Datasheet
|
|
|
General Description
Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- D R A IN 3 - S O U RC E 7 .1 0 (.2 8 0 ) 6 .7 0 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5) M IN. 1 2 3 NO T E S : 1 D IME N S IO N ING & T O L E R A N C ING P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N TR O L L ING D IM E N S IO N: IN C H . 3.3 0 (.13 0 ) 3.1 0 (.12 2 ) -B 1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D A 1 .4 0 (.0 5 5) 3X 1 .0 5 (.0 4 2) 2 .54 (.1 0 0) 2X 0 .9 0 (.0 3 5 ) 3X 0 .7 0 (.0 2 8 ) 0 .2 5 (.0 1 0) M A M B 3X 0 .4 8 (.0 1 9 ) 0 .4 4 (.0 1 7 ) B 2.