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IRFIZ24V Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 94102 IRFIZ24V Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS.

General Description

l l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.060Ω G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in mercial-industrial applications.

Key Features

  • D R A IN 3 - S O U RC E 7 .1 0 (.2 8 0 ) 6 .7 0 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5) M IN. 1 2 3 NO T E S : 1 D IME N S IO N ING & T O L E R A N C ING P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N TR O L L ING D IM E N S IO N: IN C H . 3.3 0 (.13 0 ) 3.1 0 (.12 2 ) -B 1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D A 1 .4 0 (.0 5 5) 3X 1 .0 5 (.0 4 2) 2 .54 (.1 0 0) 2X 0 .9 0 (.0 3 5 ) 3X 0 .7 0 (.0 2 8 ) 0 .2 5 (.0 1 0) M A M B 3X 0 .4 8 (.0 1 9 ) 0 .4 4 (.0 1 7 ) B 2.

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