IRFIZ24A Datasheet | Samsung Semiconductor

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25o C ) Continuous Drain Current (TC=100o C ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25o C )- Total Power Dissipation (TC=25o C ) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds BVDSS = 60 V RDS(on) = 0.07 Ω ID = 17 A D2-PAK I2-PAK 1 3 1 2 3 1. Gate 2. Drain 3. Source Value 60 17 12 68 +_ 20 149 17 4.4 5.5 3.8 44 0.29 - 55 to +175 Units V A V m J A m J V/ns W W W/o C o C Thermal Resistance Symbol Characteristic Typ. R θ JC R θ JA R θ JA Junction-to-Case Junction-to-Ambient - Junction-to-Ambient ----...