IRLR3410TRPBF Overview
IRLR3410TRPBF IRLR3410TRPBF Datasheet .VBsemi. N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 15 TO-252 D.
IRLR3410TRPBF Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC
