K22E10N1 Description
K22E10N1-VB K22E10N1-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 100 0.009 0.020 100 Single.
K22E10N1 Key Features
- TrenchFET® Power MOSFET
- 175 °C Maximum Junction Temperature
- pliant to RoHS Directive 2002/95/EC