Datasheet4U Logo Datasheet4U.com

P60N10 - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • Low Thermal Resistance Package.
  • 100 % Rg Tested.

📥 Download Datasheet

Datasheet preview – P60N10

Datasheet Details

Part number P60N10
Manufacturer VBsemi
File Size 216.19 KB
Description N-Channel MOSFET
Datasheet download datasheet P60N10 Datasheet
Additional preview pages of the P60N10 datasheet.

📁 Similar Datasheet

  • P60N03L - EQP60N03L (Fairchild Semiconductor)
  • P60N03LDG - N-Channel MOSFET (NIKO-SEM)
  • P60N05 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • P60N05-16 - STP60N05-16 (ST Microelectronics)
  • P60N06 - STP60N06 (ST Microelectronics)
  • P60N06-16 - STP60N06-16 (ST Microelectronics)
  • P60NE06-16 - STP60NE06-16 (STMicroelectronics)
  • P60NF03L - STP60NF03L (STMicroelectronics)
  • P60NF06 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • P60NF06FP - N-CHANNEL Power MOSFET (STMicroelectronics)
Other Datasheets by VBsemi

    Full PDF Text Transcription

    Click to expand full text
    P60N10-VB P60N10-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID (A) 70a TO-220AB FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters D RoHS COMPLIANT GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.
    Published: |