P60N10 Overview
P60N10-VB P60N10-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID (A) 70a TO-220AB.
P60N10 Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested