R6006ANX Description
R6006ANX-VB R6006ANX-VB Datasheet /$IBOOFM7 %4 Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.
R6006ANX Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)