R6006ANX - N-Channel 650V Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

R6006ANX n-channel 650v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	R6006ANX
Manufacturer	VBsemi
File Size	286.58 KB
Description	N-Channel 650V Power MOSFET
Datasheet	R6006ANX Datasheet

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R6006ANX-VB R6006ANX-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 0 VGS = 10 V 1.