SI1967DH-T1-GE3 Description
SI1967DH-T1-GE3 SI1967DH-T1-GE3 Datasheet .VBsemi. Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.155 at VGS = - 4.5V 0.235 at VGS = - 2.5 V ID (A)a - 1.8 - 1.5 Qg (Typ.) 2.7.
SI1967DH-T1-GE3 Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC