SI1967DH-T1-GE3 Datasheet | VBsemi

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC SC-70=-6 S1 1 6 D1 S1 S2 G1 2 5 G2 G1 G2 D2 3 4 S2 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM PD TJ, Tstg - 20 ± 12 - 1.8 -...