SI1304BDL Datasheet | VBsemi

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - Typical ESD Protection 2000 V HBM - 100 % Rg Tested - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Portable Devices - Load Switch - Battery Switch - Load Switch for Motors, Relays and Solenoids ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 20 ± 12 4a 3.6a 4a, b, c 3.7b, c 20 2.3a 1.3b, c 2.8 1.8 1.56b, c 1.0b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t5s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited, TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125...