SI1304DL Datasheet | Vishay

Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 r DS(on) (W) 0.350 @ VGS = 4.5 V 0.450 @ VGS = 2.5 V ID (A) 0.75 0.66 Qg (Typ) 13 1.3 SOT-323 SC-70 (3-LEADS) G 1 Marking Code YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1304DL-T1 3 D KB XX ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State Unit "8 0.75 0.60 3.0 0.28 0.33 0.21 - 55 to 150 0.24 0.29 0.19 0.70 0.56 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71315 S-41774- Rev. C, 04-Oct-04 .vishay. t v 5 sec Steady State Steady State Symbol Rth JA Rth JF Typical 315 380 285 Maximum 375 450 340 Unit _C/W Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE...