Datasheet4U Logo Datasheet4U.com

SI1304BDL - N-Channel 30-V (D-S) MOSFET

General Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0-V to 4.5-V gate drive.

📥 Download Datasheet

Datasheet Details

Part number SI1304BDL
Manufacturer Vishay
File Size 207.84 KB
Description N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet SI1304BDL Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI1304BDL N-Channel 20V MOSFET VBsemi
Si1305EDL P-Channel MOSFET Vishay
SI1308EDL N-Channel MOSFET Vishay
Si1315DL P-Channel MOSFET Vishay
SI1000 (SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC NTE Electronics

Other Datasheets by Vishay

Part Number Description
SI1304DL N-Channel MOSFET
SI1300BDL N-Channel MOSFET
SI1300DL N-Channel 20-V (D-S) MOSFET
SI1301DL P-Channel 20-V (D-S) MOSFET
SI1302DL N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SPICE Device Model Si1304BDL Vishay Siliconix N-Channel 30-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 4.5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.