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SI4856ADY-T1-E3 - N-Channel 30V MOSFET

Key Features

  • Halogen-free.
  • Trench Power MOSFET.
  • Optimized for High-Side Synchronous Rectifier Operation.
  • 100 % Rg Tested.
  • 100 % UIS Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D.

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Full PDF Text Transcription (Reference)

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SI4856ADY-T1-E3-VB SI4856ADY-T1-E3-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.004 at VGS = 10 V 0.005 at VGS = 4.5 V ID (A)a 18 16 Qg (Typ.) 6.