Click to expand full text
SI6475DQ-VB
SI6475DQ-VB Datasheet
P-Channel 20-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.010 at VGS = - 4.5 V
-20
0.012 at VGS = - 2.5 V
0.016 at VGS = - 1.8 V
ID (A) - 9.0 - 7.8 - 6.0
FEATURES
• Halogen-free • TrenchFET® Power MOSFETs
www.VBsemi.com
Pb-free Available
RoHS*
COMPLIANT
D1 S2 S3 G4
TSSOP-8 Top View
8D 7S 6S 5D
S*
G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
-20
V
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width)
TA = 25 °C TA = 70 °C
ID
- 9.0
-7.8
- 6.8
-5.
SI6475DQ Datasheet
