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P-Channel 12-V (D-S) MOSFET
Si6475DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.011 at VGS = - 4.5 V - 12 0.0135 at VGS = - 2.5 V
0.017 at VGS = - 1.8 V
ID (A) - 10 -9 -8
FEATURES • Halogen-free • TrenchFET® Power MOSFETs
S*
RoHS
COMPLIANT
TSSOP-8
D1 S2 S3 G4
Si6475DQ
8D 7S 6S 5D
Top View
Ordering Information: Si6475DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 10 - 7.8 - 8 - 6.
SI6475DQ Datasheet
