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SM1A25NSUB-VB
SM1A25NSUB-VB Datasheet
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.110 at VGS = 10 V 0.115 at VGS = 6 V
ID (A) 15 15
FEATURES • DT-Trench Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested
APPLICATIONS • Primary Side Switch
www.VBsemi.com
TO-251 D
GDS Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
ID
15 8.7
Pulsed Drain Current
IDM
45
A
Continuous Source Current (Diode Conduction)
IS
15
Avalanche Current
IAR
15
Repetitive Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAR
11.
SM1A25NSUB Datasheet
