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SM1A25NSV-VB
SM1A25NSV-VB Datasheet
N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.100 at VGS = 10 V 100
0.120 at VGS = 4.5 V
ID (A) 5.0 4.5
SOT-223 D
S D G
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Trench Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
5.0
4.5
3.5
3.