SSB20N60S Datasheet | VBsemi

FEATURES - Low figure-of-merit (FOM) Ron x Qg - Low input capacitance (Ciss) - Reduced switching and conduction losses - Ultra low gate charge (Qg) - Avalanche energy rated (UIS) APPLICATIONS - Server and tele power supplies - Switch mode power supplies (SMPS) - Power factor correction power supplies (PFC) - Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting - Industrial S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode d V/dt d TJ = 125 °C EAS PD TJ, Tstg d V/dt Soldering Remendations (Peak Temperature) c for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 m H, Rg = 25 Ω, IAS = 4.5 A. c. 1.6 mm from case. d. ISD ≤ ID, d I/dt = 100 A/μs, starting TJ = 25 °C. LIMIT 600 ± 30 20 10 62 1.67 485 205/35 -55 to +150 37 4.5 300 UNIT V W/°C m J W °C V/ns °C SSB20N60S-VB...