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SSB20N60S - N-Channel 600V Power MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number SSB20N60S
Manufacturer VBsemi
File Size 339.25 KB
Description N-Channel 600V Power MOSFET
Datasheet download datasheet SSB20N60S Datasheet

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    Full PDF Text Transcription

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    SSB20N60S-VB www.VBsemi.com SSB20N60S-VB Datasheet N-Channel 600V (D-S)Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 70 7.8 9 Single 0.
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