SSS5N80C Datasheet | VBsemi

FEATURES - Dynamic d V/dt Rating - Repetitive Avalanche Rated - Isolated Central Mounting Hole - Fast Switching - Ease of Paralleling - Simple Drive Requirements - pliant to Ro HS Directive 2002/95/EC Available Ro HS- PLIANT TO-220 FULLPAK GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 23 m H, Rg = 25 Ω, IAS = 7.8 A (see fig. 12). c. ISD ≤ 7.8 A, d I/dt ≤ 140 A/μs, VDD ≤ 600 V, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply LIMIT 800 ± 30 5 3.9 21 1.5 770 7.8 19 190 2.0 - 55 to + 150 300d 10 1.1 UNIT...