Si2399DS-T1-GE3 Description
Si2399DS-T1-GE3 .VBsemi. Si2399DS-T1-GE3 P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.035 at VGS = - 10 V 0.043 at VGS = - 4.5 V ID (A)a - 5e -5e 0.061 at VGS = - 2.5 V - 4.8 Qg (Typ.) 10 nC TO-236 (SOT-23) G1 S2.
Si2399DS-T1-GE3 Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC