Datasheet4U Logo Datasheet4U.com

VB1102M - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.
  • Material categorization:.

📥 Download Datasheet

Datasheet Details

Part number VB1102M
Manufacturer VBsemi
File Size 287.78 KB
Description N-Channel MOSFET
Datasheet download datasheet VB1102M Datasheet

More Datasheets from VBsemi

Part Number Description
VB1106K N-Channel MOSFET
VB1204M N-Channel MOSFET
VB1210 N-Channel MOSFET
VB1317 N-Channel 30V MOSFET
VB1330 N-Channel MOSFET
VB1435 N-Channel MOSFET
VB1630 N-Channel MOSFET
VB165R01 Power MOSFET
VB1695 N-Channel MOSFET

Full PDF Text Transcription for VB1102M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VB1102M. For precise diagrams, tables, and layout, please refer to the original PDF.

VB1102M N-Channel 100 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.240 at VGS...

View more extracted text
= 10 V 2.0 100 0.250 at VGS = 6 V 1.8 0.260 at VGS = 4.5 V 1.7 Qg (Typ.) 2.9 nC G1 S2 3D FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Material categorization: APPLICATIONS • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.