VB1102M Description
VB1102M N-Channel 100 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.240 at VGS = 10 V 2.0 100 0.250 at VGS = 6 V 1.8 0.260 at VGS = 4.5 V 1.7 Qg (Typ.) 2.9 nC G1 S2.
VB1102M Key Features
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- Material categorization