VBsemi Electronics VB1106K
N-Channel MOSFET
| Part No. | VB1106K |
|---|---|
| Datasheet | VB1106K Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Low Threshold: 2 V (typ.)
● Low Input Capacitance: 25 pF
● Fast Switching Speed: 25 ns
● Low Input and Output Leakage
● TrenchFET® Power MOSFET
● Compliant to RoHS Directive 2002/95/EC SOT-23 G1 3D S2 D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta Power Dissipationb Maximum Junction-to-Ambientb Operating Junction and Storage Temperature Range TA = 25 °C TA = 100 °C TA = 25 °C TA = 100 °C VDS VGS ID IDM PD RthJA TJ, Tstg Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. Limit 100 ± 20 260 150 800 0.37 0.15 350 - 55 to 150 Unit V mA W °C/W °C 1 VB1106K SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA Gate-Threshold Voltage VGS(th...
