Full PDF Text Transcription for VB1106K (Reference)
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VB1106K. For precise diagrams, tables, and layout, please refer to the original PDF.
GS = 10 V ID (mA) 260 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC SOT-23 G1 3D S2 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta Power Dissipationb Maximum Junction-to-Ambientb Operating Junction and Storage Temperature Range TA = 25 °C TA = 100 °C TA = 25 °C TA = 100 °C VDS VGS ID IDM PD RthJA TJ, Tstg Notes: a.
VB1106K Datasheet
