VB1106K Description
VB1106K N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 2.8 at VGS = 10 V ID (mA) 260.
VB1106K Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- Low Threshold: 2 V (typ.)
- Low Input Capacitance: 25 pF
- Fast Switching Speed: 25 ns
- Low Input and Output Leakage
- TrenchFET® Power MOSFET
- pliant to RoHS Directive 2002/95/EC