VB5610N
VB5610N is Dual-Channel MOSFET manufactured by VBsemi.
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- 100 % Rg Tested
- pliant to Ro HS Directive 2002/95/EC
TSOP-6 Top View
G1
D1
3 mm S2
S1
G2
D2
2.85 mm
D1
S2
G2 G1
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
- 60
Gate-Source Voltage
± 20
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
-...
