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VBE165R02S Datasheet N-Channel MOSFET

Manufacturer: VBsemi

Overview

VBM165R02S / VBMB165R02S VBE165R02S / VBFB165R02S www.VBsemi.com /$IBOOFM657 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 650 VGS = 10 V 2.3 Qg (Max.) (nC) 31 Qgs (nC) 4.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.