VBE165R02S
VBE165R02S is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Isolated Package
- High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz)
- Sink to Lead Creepage Distance = 4.8 mm
- Dynamic d V/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
Available
Ro HS-
PLIANT
TO-220AB
TO-220 FULLPAK
TO-251
TO-252
GD S Top View
GDS Top View
GDS Top View
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche...
