VBE25R04 Datasheet | VBsemi

FEATURES - P-Channel - Surface Mount (IRFR9310, Si HFR9310) - Straight Lead (IRFU9310, Si HFU9310) - Advanced Process Technology - Fast Switching - Fully Avalanche Rated DPAK (TO-252) D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc VGS at - 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 57 m H, Rg = 25 , IAS = - 1.8 A (see fig. 12). c. ISD  - 1.1 A, d I/dt  450 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT - 500 ± 20 - 4.0 - 3.1 -15 0.40 92 -4 15.0 80 - 24 - 55 to + 150 300 UNIT V W/°C m J A m J W V/ns...