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VBFB1104N - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • PWM Optimized.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number VBFB1104N
Manufacturer VBsemi
File Size 271.21 KB
Description N-Channel MOSFET
Datasheet download datasheet VBFB1104N Datasheet

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Full PDF Text Transcription for VBFB1104N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VBFB1104N. For precise diagrams, tables, and layout, please refer to the original PDF.

VBFB1104N N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.036 ...

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at VGS= 10 V ID (A) 35 TO-251 D FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.