VBFB1104N
VBFB1104N is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to Ro HS Directive 2002/95/EC
APPLICATIONS
- Primary Side Switch
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 m H
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 100 ± 20
35 30 110 23 3 18
96b 3a
- 55 to 175
THERMAL RESISTANCE...
