VBFB1252M Datasheet | VBsemi

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - Fast switching - Ease of paralleling - Simple drive requirements Available Available TO-251 D Drain Connected to Drain-Tab GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 4.5 m H, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD  14 A, d I/dt  150 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 250 ± 20 17 11 56 1.0 550 17 13 125 4.8 -55 to +150 300 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m .VBsemi. THERMAL RESISTANCE RATINGS PARAMETER...