VBI1201K Datasheet | VBsemi

FEATURES - Available in tape and reel - Dynamic d V/dt rating - Repetitive avalanche rated - Fast switching - Ease of paralleling - Simple drive requirements .VBsemi. Available GD S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor (PCB Mount) e Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) e Peak Diode Recovery d V/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 81 m H, RG = 25 , IAS = 0.96 A (see fig. 12). c. ISD  3.3 A, d I/dt  70 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 200 ± 20 2.0 1.2 7.7 0.025 0.017 50 0.96 0.31 3.1 2.0 5.0 -55 to +150 300 UNIT V W/°C m J A m J W V/ns °C .VBsemi. THERMAL RESISTANCE...