VBI2102M Description
VBI2102M P-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () - 100 0.200 at VGS = - 10 V 0.230 at VGS = - 6 V ID (A) - 3.0 - 2.4 Qg (Typ.) 13.2 nC S D.
VBI2102M Key Features
- TrenchFET® Power MOSFET
- 100% Rg and UIS Tested
VBI2102M Applications
- Active Clamp in Intermediate DC/
- H-Bridge High Side Switch for