• Part: VBI2338
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 237.19 KB
Download VBI2338 Datasheet PDF
VBsemi
VBI2338
VBI2338 is P-Channel MOSFET manufactured by VBsemi.
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - 100 % Rg Tested APPLICATIONS - Load Switch - Battery Switch GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 30 ± 20 - 7.6 - 5.8 - 6.0a,...