VBI3328
VBI3328 is Dual N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Halogen-free According to IEC 61249-2-21
Definition
- Trench FET® Power MOSFET
- 100 % UIS Tested
- 100 % Rg Tested
- pliant to Ro HS Directive 2002/95/EC
APPLICATIONS
- Set Top Box
- Low Current DC/DC
(6)
(5)
(4)
(1) (2) (3)
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain
(1)
(2)
(3)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS VGS
IDM IS IAS EAS
TJ,...
