VBL1202M Datasheet | VBsemi

FEATURES - Surface mount - Low-profile through-hole - Available in tape and reel - Dynamic d V/dt rating - 150 °C operating temperature - Fast switching - Fully avalanche rated .VBsemi. Available Available D2PAK (TO-263) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a, e Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energy b, e Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery d V/dt c, e TC = 25 °C TA = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 m H, Rg = 25 , IAS = 18 A (see fig. 12). c. ISD  18 A, d I/dt  150 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. Uses IRF640, Si HF640 data and test conditions. LIMIT 200 ± 20 18 11 72 1.0 580 18 13 130 3.1 5.0 -55 to +150 300 UNIT V A W/°C m J A m J W V/ns °C .VBsemi. THERMAL RESISTANCE...