VBL1206N Description
VBL1206N N-Channel 200 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.050 at VGS = 10 V 0.060 at VGS = 6.5 V TO-263 ID (A) 40.
VBL1206N Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- PWM Optimized for Fast Switching
- pliant to RoHS Directive 2002/95/EC