VBL1206N
VBL1206N is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- PWM Optimized for Fast Switching
- pliant to Ro HS Directive 2002/95/EC
APPLICATIONS
- Isolated DC/DC Converters
- Primary-Side Switch
GD S Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
L = 0.1 m H
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 200 ± 20 40 25 80 20 16.2 200b 4.5
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient...
