VBMB14R04 Datasheet | VBsemi

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - Available in tape and reel - Fast switching - Ease of paralleling TO-220 FULLPAK .VBsemi. Available GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Linear Derating Factor (PCB Mount) e Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery d V/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 29 m H, Rg = 25 Ω, IAS = 3.1 A (see fig. 12). c. ISD ≤ 3.1 A, d I/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 400 ± 20 4.0 2.6 15 0.33 0.020 160 4.0 4.8 35 2.5 4.0 -55 to +150 260 UNIT V W/°C m J A m J W V/ns °C .VBsemi. THERMAL RESISTANCE...