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VBMB165R02 - N-Channel MOSFET

Features

  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS.

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Datasheet preview – VBMB165R02

Datasheet Details

Part number VBMB165R02
Manufacturer VBsemi
File Size 356.08 KB
Description N-Channel MOSFET
Datasheet download datasheet VBMB165R02 Datasheet
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Full PDF Text Transcription

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VBMB165R02 N-Channel 650V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 4.0 11 2.3 5.
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