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VBMB165R02S - N-Channel MOSFET

This page provides the datasheet information for the VBMB165R02S, a member of the VBM165R02S N-Channel MOSFET family.

Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.

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Datasheet preview – VBMB165R02S

Datasheet Details

Part number VBMB165R02S
Manufacturer VBsemi
File Size 533.53 KB
Description N-Channel MOSFET
Datasheet download datasheet VBMB165R02S Datasheet
Additional preview pages of the VBMB165R02S datasheet.

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Full PDF Text Transcription

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VBM165R02S / VBMB165R02S VBE165R02S / VBFB165R02S www.VBsemi.com /$IBOOFM657 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 650 VGS = 10 V 2.3 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.
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