VBMB165R10S - N-Channel Power MOSFET

This page provides the datasheet information for the VBMB165R10S, a member of the VBM165R10S N-Channel Power MOSFET family.

Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

VBsemi

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Datasheet Details

Part number	VBMB165R10S
Manufacturer	VBsemi
File Size	288.16 KB
Description	N-Channel Power MOSFET
Datasheet	VBMB165R10S Datasheet
Additional preview pages of the VBMB165R10S datasheet.

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Full PDF Text Transcription

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VBM165R10S / VBE165R10S / VBMB165R10S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 0.5 38 4 4.

Published: Dec 22, 2024 |