VBMB165R16 - N-Channel MOSFET

Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

VBsemi

Datasheet Details

Part number	VBMB165R16
Manufacturer	VBsemi
File Size	313.57 KB
Description	N-Channel MOSFET
Datasheet	VBMB165R16 Datasheet
Additional preview pages of the VBMB165R16 datasheet.

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Full PDF Text Transcription

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VBMB165R16 N-Channel 650V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 45 6 26 Single 0.

Published: Dec 22, 2024 |