VBP1104N Description
VBP1104N N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.035 at VGS = 10 V ID (A) 85 TO-247AC S D.
VBP1104N Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested