VBP1104N
FEATURES
- Trench FET® Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested APPLICATIONS
- Isolated DC/DC Converters
S N-Channel MOSFET
Ro HS
PLIANT
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
Pulsed Drain Current
Avalanche Current Single Pulse Avalanche Energyb
L = 0.1 m H
Maximum Power Dissipationb
TC = 25 °C
TA = 25 °Cd
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient
Junction-to-Case (Drain)
Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material).
PCB Mount
Symbol Rth JA Rth JC
Limit 100 ± 20 85 60 150 39 61 375c...
