VBP1106 Overview
VBP1106 N-Channel 100 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.006 at VGS = 10 V ID (A) 150.
VBP1106 Key Features
- TrenchFET® Power MOSFET
- New Package with Low Thermal Resistance
- 100 % Rg Tested
Datasheet Details
| Part number | VBP1106 |
|---|---|
| Datasheet | VBP1106-VBsemi.pdf |
| File Size | 260.80 KB |
| Manufacturer | VBsemi |
| Description | N-Channel MOSFET |
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