VBP1106 Description
VBP1106 N-Channel 100 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.006 at VGS = 10 V ID (A) 150.
VBP1106 Key Features
- TrenchFET® Power MOSFET
- New Package with Low Thermal Resistance
- 100 % Rg Tested
VBP1106 is N-Channel MOSFET manufactured by VBsemi.
| Part Number | Description |
|---|---|
| VBP1104N | N-Channel MOSFET |
| VBP112MC100 | N-Channel MOSFET |
| VBP112MC100-4L | N-Channel MOSFET |
| VBP112MC60 | N-Channel MOSFET |
| VBP112MI75 | 1200V Trench and Fieldstop IGBT |
VBP1106 N-Channel 100 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.006 at VGS = 10 V ID (A) 150.