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VBP1106
N-Channel 100 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 100
RDS(on) (Ω) 0.006 at VGS = 10 V
ID (A) 150
FEATURES • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested
D
TO-247AC
S D G Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
Avalanche Current Repetitive Avalanche Energyb
L = 0.1 mH
Maximum Power Dissipationb Operating Junction and Storage Temperature Range
TC = 25 °C TA = 25 °C
VDS VGS
ID
IDM IAR EAR
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
TO-247
Junction-to-Case (Drain)
Notes: a.
VBP1106 Datasheet
