VBP1106
FEATURES
- Trench FET® Power MOSFET
- New Package with Low Thermal Resistance
- 100 % Rg Tested
TO-247AC
S D G Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
Avalanche Current Repetitive Avalanche Energyb
L = 0.1 m H
Maximum Power Dissipationb Operating Junction and Storage Temperature Range
TC = 25 °C TA = 25 °C
VDS VGS
IDM IAR EAR
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
TO-247
Junction-to-Case (Drain)
Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating.
Symbol Rth JA Rth JC
Limit 100 ± 20 150 100a 600 75 280 375c 3.75
- 55 to 175
Limit 40 0.5
Unit V
A m J W °C
Unit °C/W
.VBsemi.
SPECIFICATIONS TJ = 25 °C, unless otherwise...
