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VBP1106 - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • New Package with Low Thermal Resistance.
  • 100 % Rg Tested D TO-247AC S D G Top View G S N-Channel MOSFET.

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Datasheet Details

Part number VBP1106
Manufacturer VBsemi
File Size 260.80 KB
Description N-Channel MOSFET
Datasheet download datasheet VBP1106 Datasheet
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VBP1106 N-Channel 100 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.006 at VGS = 10 V ID (A) 150 FEATURES • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-247AC S D G Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C VDS VGS ID IDM IAR EAR PD TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient TO-247 Junction-to-Case (Drain) Notes: a.
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