VBP1106 Description
VBP1106 N-Channel 100 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.006 at VGS = 10 V ID (A) 150.
VBP1106 Key Features
- TrenchFET® Power MOSFET
- New Package with Low Thermal Resistance
- 100 % Rg Tested
- Part: VBP1106
- Manufacturer: VBsemi
- Size: 260.80 KB
