VBP112MC100-4L Description
VBP112MC100-4L N-Channel 1200V (D-S) SiC Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC) 1200 VGS = 18 V 108 0.021.
VBP112MC100-4L Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)