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VBP112MC100 - N-Channel MOSFET

Datasheet Summary

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet preview – VBP112MC100

Datasheet Details

Part number VBP112MC100
Manufacturer VBsemi
File Size 835.24 KB
Description N-Channel MOSFET
Datasheet download datasheet VBP112MC100 Datasheet
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Full PDF Text Transcription

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VBP112MC100 N-Channel 1200V (D-S) SiC Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg (nC) 1200 VGS = 18 V 108 0.
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