VBQA1105
VBQA1105 is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested
APPLICATIONS
- Isolated DC/DC Converters
Ro HS
PLIANT
Top View
DFN5X6 Bottom View
PIN1
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
Pulsed drain current (t = 100 μs)
TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current Single pulse avalanche energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) c
VDS VGS
IDM IS IAS EAS
TJ,...
