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VBQA1105
N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.006 at VGS = 10 V
ID (A) 95
FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested
APPLICATIONS • Isolated DC/DC Converters
RoHS
COMPLIANT
Top View
DFN5X6 Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
Pulsed drain current (t = 100 μs)
TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current Single pulse avalanche energy
TC = 25 °C TA = 25 °C
L = 0.
VBQA1105 Datasheet
