VBsemi Electronics VBQF2205
P-Channel MOSFET
| Part No. | VBQF2205 |
|---|---|
| Datasheet | VBQF2205 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Load Switch● Adaptor/Battery Switch S Top View 1 8 2 7 3 6 4 5 G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 20 V VGS ± 16 TC = 25 °C - 52 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 40g - 26b, c TA = 70 °C - 21b, c A Pulsed Drain Current IDM - 150 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS - 40g - 4.5b, c TC = 25 °C 54 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 34.7 5.0b, c W TA = 70 °C 3.2b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mount...
