VBsemi Electronics VBQF2207
The DFN3X3 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | VBQF2207 |
|---|---|
| Datasheet | VBQF2207 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● Thermally Enhanced DFN3X3 Package
● Low On-Resistance for Low Voltage Drop DFN 3x3 EP Top View Bottom View Pin 1
APPLICATIONS
● Load Switch, PA Switch, and Battery Switch for Portable Devices Top View 1 8 2 7 3 6 4 5 S G D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 20 V VGS ± 12 TC = 25 °C - 52a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 40a - 31b, c TA = 70 °C - 25b, c A Pulsed Drain Current (t = 300 µs) IDM - 208 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS - 52a - 29b, c TC = 25 °C 89 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 33 W 6.5b, c TA = 70 °C 4.2b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s RthJA 18 Steady State RthJC 1.3 26 °C/W 1.5 Notes: a.
