VBsemi Electronics VBQF2311
P-Channel MOSFET
| Part No. | VBQF2311 |
|---|---|
| Datasheet | VBQF2311 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● 100 % Rg and UIS tested
APPLICATIONS
● Notebook battery charging● Notebook adapter switch S Top View 1 8 2 7 3 6 4 5 G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) e, f TJ, Tstg LIMIT -30 ± 25 -30 d -25 d -13.9 a, b -11.1 a, b -120 -35 d -3 a, b -29 42 52 33 3.7 a, b 2.4 a, b -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient a, c Maximum Junction-to-Case t ≤ 10 s RthJA 26 Steady State RthJC 1.9 33 °C/W 2.4 Notes a.
