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VBQF2311
www.VBsemi.com
P-Channel 30-V (D-S) MOSFET
VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V
ID
-30 V 9 mΩ 17 mΩ -30 A
DFN 3x3 EP
Top View
Bottom View
Pin 1
FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested
APPLICATIONS • Notebook battery charging • Notebook adapter switch
S
Top View
1
8
2
7
3
6
4
5
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Avalanche Current Single-Pulse Avalanche Energy
L = 0.
VBQF2311 Datasheet
