VBZ7001 Datasheet | VBsemi

FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - High-Side Switching - Low On-Resistance: 2.8 Ω - Low Threshold: - 2 V (typ.) - Fast Swtiching Speed: 20 ns (typ.) - Low Input Capacitance: 20 p F (typ.) - pliant to Ro HS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range TA = 25 °C TA = 100 °C TA = 25 °C TA = 100 °C VDS VGS ID IDM Rth JA TJ, Tstg Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Limit - 60 ± 20 - 500 - 380 -1500 460 240 350 - 55 to 150 Unit V m A m W °C/W °C .VBsemi. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Min. Typ.a Max....