VBZ7001 Description
VBZ7001 P-Channel 60 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () - 60 2.8 at VGS = - 10V VGS(th) (V) - 1 to - 3 ID (mA) -500.
VBZ7001 Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- High-Side Switching
- Low On-Resistance: 2.8 Ω
- Low Threshold
- 2 V (typ.)
- Fast Swtiching Speed: 20 ns (typ.)
- Low Input Capacitance: 20 pF (typ.)
- pliant to RoHS Directive 2002/95/EC