VBZA4946
VBZA4946 is Dual N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® power MOSFET
- 100 % Rg and UIS tested
D1
D2
G1
G2
3 G2 2 S2 1 G1 S1 Top View
S1
S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.1 m H TC = 25 °C TC = 125 °C
VDS VGS
IS IDM IAS EAS
TJ, Tstg
LIMIT 60 ± 20 6 4 3.6 50 18 16 4 1.3
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Foot (Drain)
PCB Mount c
Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material).
SYMBOL Rth JA Rth JF
LIMIT 110 34
UNIT V
A m J W °C
UNIT °C/W
.VBsemi.
SPECIFICATIONS (TC = 25 °C, unless otherwise...
