VBZL80N06
VBZL80N06 is N-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested
TO-263 D
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25 °C a TC = 125 °C
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 m H
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
Operating Junction and Storage Temperature Range
PD TJ, Tstg
LIMIT 60 ± 20 100 65 120 350 65 211 220 70
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
SYMBOL Rth JA Rth JC
LIMIT 40 0.65
UNIT...
